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    IRFZ44N MOSFET
    RM2.50
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    Transistor BC547 NPN
    RM1.00
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    Transistor SS8050

    Type Designator: SS8050

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 1 W

    Maximum Collector-Base Voltage |Vcb|: 40 V

    Maximum Collector-Emitter Voltage |Vce|: 25 V

    Maximum Collector Current |Ic max|: 1.5 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 100 MHz

    Forward Current Transfer Ratio (hFE), MIN: 85

    Noise Figure, dB: -

    Package: TO92

    RM1.00
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    Transistor S9015

    Type Designator: S9015

    Material of Transistor: Si

    Polarity: PNP

    Maximum Collector Power Dissipation (Pc): 0.2 W

    Maximum Collector-Base Voltage |Vcb|: 50 V

    Maximum Collector-Emitter Voltage |Vce|: 45 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.1 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 150 MHz

    Forward Current Transfer Ratio (hFE), MIN: 200

    Noise Figure, dB: -

    Package: SOT23

    S9015 Transistor Equivalent Substitute - Cross-Reference Search

    RM1.00
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    Transistor A1015

    Type Designator: A1015

    Material of Transistor: Si

    Polarity: PNP

    Maximum Collector Power Dissipation (Pc): 0.2 W

    Maximum Collector-Base Voltage |Vcb|: 50 V

    Maximum Collector-Emitter Voltage |Vce|: 50 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.15 A

    Max. Operating Junction Temperature (Tj): 125 °C

    Transition Frequency (ft): 80 MHz

    Forward Current Transfer Ratio (hFE), MIN: 130

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor S9018

    Type Designator: S9018

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 0.2 W

    Maximum Collector-Base Voltage |Vcb|: 30 V

    Maximum Collector-Emitter Voltage |Vce|: 15 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.05 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 600 MHz

    Forward Current Transfer Ratio (hFE), MIN: 70

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor S9012

    ype Designator: S9012

    Material of Transistor: Si

    Polarity: PNP

    Maximum Collector Power Dissipation (Pc): 0.3 W

    Maximum Collector-Base Voltage |Vcb|: 40 V

    Maximum Collector-Emitter Voltage |Vce|: 25 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.5 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 150 MHz

    Collector Capacitance (Cc): 5 pF

    Forward Current Transfer Ratio (hFE), MIN: 120

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor S9014

    Type Designator: S9014

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 0.2 W

    Maximum Collector-Base Voltage |Vcb|: 50 V

    Maximum Collector-Emitter Voltage |Vce|: 45 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.1 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 150 MHz

    Forward Current Transfer Ratio (hFE), MIN: 200

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor S8550

    Type Designator: S8550

    Material of Transistor: Si

    Polarity: PNP

    Maximum Collector Power Dissipation (Pc): 0.3 W

    Maximum Collector-Base Voltage |Vcb|: 40 V

    Maximum Collector-Emitter Voltage |Vce|: 25 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.5 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 150 MHz

    Forward Current Transfer Ratio (hFE), MIN: 120

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor SS8550

    ype Designator: SS8550

    Material of Transistor: Si

    Polarity: PNP

    Maximum Collector Power Dissipation (Pc): 1 W

    Maximum Collector-Base Voltage |Vcb|: 40 V

    Maximum Collector-Emitter Voltage |Vce|: 25 V

    Maximum Collector Current |Ic max|: 1.5 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 100 MHz

    Forward Current Transfer Ratio (hFE), MIN: 85

    Noise Figure, dB: -

    Package: TO92

    RM1.00
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    Transistor S8050
    RM1.00
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    Transistor 2N5551
    • Amplifier NPN Transistor
    • High DC Current Gain (hFE), typically 80 when IC=10mA
    • Continuous Collector current (IC) is 600mA
    • Collector-Emitter voltage (VCE) is 160 V
    • Collector-Base voltage (VCB) is 180V
    • Emitter Base Voltage (VBE) is 6V
    • Transition Frequency is 100MHz
    • Available in To-92 Package
    RM1.00
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    Transistor S9013

    Type Designator: S9013

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 0.3 W

    Maximum Collector-Base Voltage |Vcb|: 40 V

    Maximum Collector-Emitter Voltage |Vce|: 25 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.5 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 150 MHz

    Forward Current Transfer Ratio (hFE), MIN: 120

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor 2N5401
    RM1.00
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    Transistor A733

    Type Designator: A733

    Material of Transistor: Si

    Polarity: PNP

    Maximum Collector Power Dissipation (Pc): 0.2 W

    Maximum Collector-Base Voltage |Vcb|: 60 V

    Maximum Collector-Emitter Voltage |Vce|: 50 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.15 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 50 MHz

    Collector Capacitance (Cc): 4.5 pF

    Forward Current Transfer Ratio (hFE), MIN: 120

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor C945

    ype Designator: C945

    Material of Transistor: Si

    Polarity: NPN

    Maximum Collector Power Dissipation (Pc): 0.2 W

    Maximum Collector-Base Voltage |Vcb|: 60 V

    Maximum Collector-Emitter Voltage |Vce|: 50 V

    Maximum Emitter-Base Voltage |Veb|: 5 V

    Maximum Collector Current |Ic max|: 0.15 A

    Max. Operating Junction Temperature (Tj): 150 °C

    Transition Frequency (ft): 150 MHz

    Collector Capacitance (Cc): 3 pF

    Forward Current Transfer Ratio (hFE), MIN: 130

    Noise Figure, dB: -

    Package: SOT23

    RM1.00
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    Transistor C1815
    • Collector-Emitter Volt (Vceo): 50V
    • Collector-Base Volt (Vcbo): 60V
    • Collector Current (Ic): 0.15A
    • hfe: 70-700 @ 2mA
    • Power Dissipation (Ptot): 400mW
    • Current-Gain-Bandwidth (ftotal): 80MHz
    • Type: NPN
    RM1.00
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    Transistor 2N2222A NPN

    e JEDEC registration of a device number ensures particular rated values will be met by all parts offered under that number. JEDEC registered parameters include outline dimensions, small-signal current gain, transition frequency, maximum values for voltage withstand, current rating, power dissipation and temperature rating, and others, measured under standard test conditions. Other part numbers will have different parameters. The exact specifications depend on the manufacturer, case type, and variation. Therefore, it is important to refer to the datasheet for the exact part number and manufacturer.

    Manufacturer Vce Ic PD fT
    ST Microelectronics[12]
    2N2222A
    40 V 800 mA 500 mW/1.8 W 300 MHz

    All variations have a beta or current gain (hFE) of at least 100 in optimal conditions. It is used in a variety of analog amplification and switching applications.

    RM1.00
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    Transistor 2N3904 NPN
    RM1.00
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    Transistor 2N3906 PNP

    PRODUCT CONTENTS:

    • 1 — 2N3906 PNP General-Purpose Amplifier Transistor
    RM1.00
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